3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction

Open access
Date
2013-12Type
- Journal Article
Permanent link
https://doi.org/10.3929/ethz-b-000075447Publication status
publishedExternal links
Journal / series
Journal of Computational ElectronicsVolume
Pages / Article No.
Publisher
SpringerSubject
3D Monte Carlo; Quantum effects; Fully-depleted SOI devices; FinFETOrganisational unit
03228 - Fichtner, Wolfgang
Notes
Published online 7 November 2013. It was possible to publish this article open access thanks to a Swiss National Licence with the publisherMore
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