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dc.contributor.author
Leuthold, Juerg
dc.contributor.author
Mayer, M.
dc.contributor.author
Eckner, J.
dc.contributor.author
Guekos, G.
dc.contributor.author
Melchior, H.
dc.contributor.author
Zellweger, C.
dc.date.accessioned
2017-06-11T01:13:24Z
dc.date.available
2017-06-11T01:13:24Z
dc.date.issued
2000-01
dc.identifier.issn
0021-8979
dc.identifier.issn
1089-7550
dc.identifier.other
10.1063/1.371909
dc.identifier.uri
http://hdl.handle.net/20.500.11850/75963
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Material gain of bulk 1.55 mu m InGaAsP/InP semiconductor optical amplifiers approximated by a polynomial model
dc.type
Journal Article
ethz.journal.title
Journal of Applied Physics
ethz.journal.volume
87
ethz.journal.issue
1
ethz.journal.abbreviated
J. Appl. Physi.
ethz.pages.start
618
ethz.notes
Received 05 April 1999, Accepted 05 Oktober 1999.
ethz.identifier.nebis
000037502
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory::03974 - Leuthold, Juerg / Leuthold, Juerg
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory::03974 - Leuthold, Juerg / Leuthold, Juerg
ethz.date.deposited
2017-06-11T01:15:00Z
ethz.source
ECIT
ethz.identifier.importid
imp5936514c2e18995528
ethz.ecitpid
pub:119800
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-13T13:19:35Z
ethz.rosetta.lastUpdated
2021-02-14T11:01:06Z
ethz.rosetta.versionExported
true
ethz.COinS
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