Comparison of AlInP and GaInP Emitters in GaAsSb-Based DHBTs:Emitter-Size Effects and RF Performance
dc.contributor.author
Lövblom, R.
dc.contributor.author
Flückiger, R.
dc.contributor.author
Ostinelli, O.
dc.contributor.author
Alexandrova, M.
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2017-06-11T03:56:03Z
dc.date.available
2017-06-11T03:56:03Z
dc.date.issued
2013
dc.identifier.uri
http://hdl.handle.net/20.500.11850/79202
dc.language.iso
en
dc.publisher
37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2013)
dc.title
Comparison of AlInP and GaInP Emitters in GaAsSb-Based DHBTs:Emitter-Size Effects and RF Performance
dc.type
Other Conference Item
ethz.event
37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2013)
ethz.event.location
Warnemünde, Germany
ethz.event.date
May 26-29, 2013
ethz.notes
Conference lecture on 27 May 2013.
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung / Domain VP Research::02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.date.deposited
2017-06-11T03:57:52Z
ethz.source
ECIT
ethz.identifier.importid
imp59365189a1cb656017
ethz.ecitpid
pub:124499
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-20T16:57:54Z
ethz.rosetta.lastUpdated
2022-03-28T12:27:54Z
ethz.rosetta.versionExported
true
ethz.COinS
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