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dc.contributor.author
Luisier, Mathieu
dc.date.accessioned
2017-06-11T04:17:44Z
dc.date.available
2017-06-11T04:17:44Z
dc.date.issued
2013-09
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.4821117
dc.identifier.uri
http://hdl.handle.net/20.500.11850/79630
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Thermal transport and Matthiessen's rule in ultra-scaled Si nanowires
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
103
ethz.journal.issue
11
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
113103
ethz.size
4 p.
ethz.notes
Received 30 Juli 2013, Accepted 28 August 2013, Published online 10 September 2013.
ethz.identifier.wos
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.date.deposited
2017-06-11T04:17:56Z
ethz.source
ECIT
ethz.identifier.importid
imp593651915a12b34406
ethz.ecitpid
pub:125050
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-15T02:31:27Z
ethz.rosetta.lastUpdated
2022-03-28T12:29:06Z
ethz.rosetta.versionExported
true
ethz.COinS
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