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dc.contributor.author
Luisier, M.
dc.contributor.author
Schenk, A.
dc.contributor.author
Fichtner, W.
dc.contributor.editor
Grasser, Tibor
dc.contributor.editor
Selberherr, Siegfried
dc.date.accessioned
2017-06-08T17:59:27Z
dc.date.available
2017-06-08T17:59:27Z
dc.date.issued
2007
dc.identifier.isbn
978-3-211-72860-4
dc.identifier.other
10.1007/978-3-211-72861-1_52
dc.identifier.uri
http://hdl.handle.net/20.500.11850/7996
dc.language.iso
en
dc.publisher
Springer
dc.title
Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors
dc.type
Conference Paper
ethz.book.title
Simulation of Semiconductor Processes and Devices 2007
ethz.journal.volume
12
ethz.pages.start
221
ethz.pages.end
224
ethz.event
12th International Conference on Simulation of Semiconductor Processes and Devices
ethz.event.date
September 25-27, 2007
ethz.notes
DOI for the whole book: 10.1007/978-3-211-72861-1. ISBN: 978-3-211-72861-1. SpringerLink Date: Sunday, November 18, 2007.
ethz.publication.place
Vienna
ethz.publication.status
published
ethz.leitzahl
03228 - Fichtner, Wolfgang
ethz.leitzahl.certified
03228 - Fichtner, Wolfgang
ethz.date.deposited
2017-06-08T17:59:33Z
ethz.source
ECIT
ethz.identifier.importid
imp59364bbe3fe8090804
ethz.ecitpid
pub:18645
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-20T15:21:18Z
ethz.rosetta.lastUpdated
2017-07-20T15:21:18Z
ethz.rosetta.versionExported
true
ethz.COinS
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