- Conference Paper
The gate currents of Si nanowire transistors are investigated using a three-dimensional, real-space, and self-consistent Schrodinger-Poisson solver. The influence of the gate material (metal or poly-Si) and the choice of the dielectric (SiO 2 or high- kappa stacks) are studied in details. Then, the performances of nanometer-scaled triple-gate structures are analyzed with respect to ON- and OFF-currents, subthreshold swing, and threshold voltage. Show more
Book title2007 IEEE International Electron Devices Meeting
Pages / Article No.
Organisational unit03228 - Fichtner, Wolfgang
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