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>150 GHz Hybrid-Plasmonic BaTiO3-On-SOI Modulator for CMOS Foundry Integration
(2021)Frontiers in Optics + Laser Science 2021A ferroelectric, metal-oxide-semiconductor (MOS) based, hybrid-plasmonic modulator is shown to feature bandwidths of >150 GHz and is tested with 32 Gbit/s NRZ. The device is relying on BaTiO3-on-SOI and potentially offers CMOS compatibility.Conference Paper -
10Gb/s Intra-Chip Compact Electro-Optical Interconnect
(2021)OSA Technical Digest ~ Optical Fiber Communication Conference (OFC) 2021We demonstrate a digital-to-optical-to-digital link operating at 10 Gb/s with 2.4 pJ/b below 10-9 BER enabled by zero-change CMOS macros. All necessary electronic-photonic circuits are contained within 0.015 mm2 of silicon area.Conference Paper -
Enhanced Stability of Resonant Racetrack Plasmonic-Organic-Hybrid Modulators
(2022)Technical Digest Series ~ 2022 Optical Fiber Communications Conference and Exhibition (OFC)A high-speed and compact plasmonic organic racetrack modulator is shown to be orders of magnitude more robust against operating condition changes compared to resonant modulators based on the plasma dispersion effect while maintaining thermal tunability. Stable operation at 80°C is shown with no degradation.Conference Paper