In many pulse power applications there is a trend to modulators based on semiconductor technology. For these modulators high voltage and high current semiconductor switches are required in order to achieve a high pulsed power. Therefore, often high power IGBT modules or IGCT devices are used. Since these devices are based on bipolar technology the switching speed is limited and the switching losses are higher. In contrast to bipolar devices ...

Solid state modulators based on pulse transformer offer the advantage, that with the turns ratio of the transformer, the primary voltage ideally could be adapted to the available switch technology and a series connection of switches could be avoided. For increasing the power level several semiconductor switches must be connected in parallel and a balancing between the different switches must be guaranteed. There, the Matrix Transformer ...

In more and more pulsed power applications solid state modulators are applied. There, often IGBT modules must be connected in parallel due to their limited power handling capability. For balancing the currents in the IGBTs a control method adapting the gate signal of the single IGBTs has been presented in a previous paper. Besides the current balancing also the fall and rise times of the voltages/currents are crucial as they significantly ...