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Bi-Directional Isolated DC-DC Converter for Next-Generation Power Distribution - Comparison of Converters using Si and SiC Devices
(2007)2007 Power Conversion Conference ProceedingsIn this paper two bi-directional DC-DC converters for a 1MW next-generation BTB system of a distribution system, as it is applied in Japan, are presented and compared with respect to design, efficiency and power density. One DC-DC converter applies commercially available Si-devices and the other one high voltage SiC switch, which consists of a SiC JFET cascode (MOSFET+1 JFET) in series with five SiC JFETs. In the comparison also the high ...Conference Paper -
Balancing circuit for a 5kV/50ns pulsed power switch based on SiC-JFET Super Cascode
(2009)2009 IEEE Pulsed Power ConferenceIn many pulse power applications there is a trend to modulators based on semiconductor technology. For these modulators high voltage and high current semiconductor switches are required in order to achieve a high pulsed power. Therefore, often high power IGBT modules or IGCT devices are used. Since these devices are based on bipolar technology the switching speed is limited and the switching losses are higher. In contrast to bipolar devices ...Conference Paper -
Optimal design of a two-winding inductor bouncer circuit
(2009)2009 IEEE Pulsed Power ConferenceIn many pulsed power applications the flatness of the output pulse is an important characteristic to enable proper system operation, whereas a pulse flatness within less than a few percent has to be achieved. In power modulators based on capacitor discharge this voltage droop is mainly defined by the input capacitance. In order to overcome this problem, in power modulators systems, compensation circuits are added, whereby in spite of a ...Conference Paper -
Transient behaviour of solid state modulators with Matrix Transformers
(2009)2009 IEEE Pulsed Power ConferenceSolid state modulators based on pulse transformer offer the advantage, that with the turns ratio of the transformer, the primary voltage ideally could be adapted to the available switch technology and a series connection of switches could be avoided. For increasing the power level several semiconductor switches must be connected in parallel and a balancing between the different switches must be guaranteed. There, the Matrix Transformer ...Conference Paper -
Novel Concepts for Integrating the Electric Drive and Auxiliary Dc-Dc Converter for Hybrid Vehicles
(2007)APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and ExpositionCost, volume and weight are three major driving forces in the automotive area. This is also true for hybrid vehicles which attract more and more attention due to increasing fuel costs and air pollution. In hybrid vehicles the energy distribution system causes a significant share of the volume and the costs. In order to reduce the costs and the volume of this system two new concepts for integrating the dc-dc converter, which transfers the ...Conference Paper -
Optimal Design of a DC Reset Circuit for Pulse Transformers
(2007)APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and ExpositionPulsed power systems often use a pulse transformer to generate high voltage pulses. In order to improve the utilization of the transformer core material usually a dc reset circuit is applied which results in a smaller transformer volume. However, by the use of a reset circuit additional losses are genrated. Usually, in the dimensioning of the reset circuit only the copper losses are considered but these are only a small part of the whole ...Conference Paper -
Double-Stage Gate Drive Circuit for Parallel Connected IGBT Modules
(2008)Proceedings of the 2008 IEEE International Power Modulators and High-Voltage ConferenceIn more and more pulsed power applications solid state modulators are applied. There, often IGBT modules must be connected in parallel due to their limited power handling capability. For balancing the currents in the IGBTs a control method adapting the gate signal of the single IGBTs has been presented in a previous paper. Besides the current balancing also the fall and rise times of the voltages/currents are crucial as they significantly ...Conference Paper -
5kV/200ns Pulsed Power Switch based on a SiC-JFET Super Cascode
(2008)Proceedings of the 2008 IEEE International Power Modulators and High-Voltage ConferenceIn many pulse power applications there is a trend to modulators based on semiconductor technology. For these modulators high voltage and high current semiconductor switches are required in order to achieve a high pulsed power. Therefore, often high power IGBT modules or IGCT devices are used. Since these devices are based on bipolar technology the switching speed is limited and the switching losses are higher. In contrast to bipolar devices ...Conference Paper -
Optimal Design of a 3.5 kV/11kW DC-DC Converter for Charging Capacitor Banks of Power Modulators
(2009)2009 IEEE Pulsed Power Conference : PPC 2009 ; Washington, DC, USA, 28 June - 2 July 2009Conference Paper -
Novel Modulation Concepts for a Drive-Integrated Auxiliary Dc-Dc Converter for Hybrid Vehicles
(2009)Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition, 2009. APEC 2009Conference Paper