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dc.contributor.author
Sponton, L.
dc.contributor.author
Bomholt, L.
dc.contributor.author
Fichtner, W.
dc.contributor.editor
Grasser, Tibor
dc.contributor.editor
Selberherr, Siegfried
dc.date.accessioned
2017-06-08T18:01:09Z
dc.date.available
2017-06-08T18:01:09Z
dc.date.issued
2007
dc.identifier.isbn
978-3-211-72860-4
dc.identifier.other
10.1007/978-3-211-72861-1_93
dc.identifier.uri
http://hdl.handle.net/20.500.11850/8023
dc.language.iso
en
dc.publisher
Springer
dc.title
Analysis of Process-Geometry Modulations through 3D TCAD
dc.type
Conference Paper
ethz.book.title
Simulation of Semiconductor Processes and Devices 2007
ethz.journal.volume
12
ethz.pages.start
385
ethz.pages.end
388
ethz.event
12th International Conference on Simulation of Semiconductor Processes and Devices
ethz.event.date
September 25-27, 2007
ethz.notes
ISBN: 978-3-211-72861-1. DOI for the whole book: 10.1007/978-3-211-72861-1. SpringerLink Date: Sunday, November 18, 2007.
ethz.publication.place
Wien
ethz.publication.status
published
ethz.leitzahl
03228 - Fichtner, Wolfgang
ethz.leitzahl.certified
03228 - Fichtner, Wolfgang
ethz.date.deposited
2017-06-08T18:01:30Z
ethz.source
ECIT
ethz.identifier.importid
imp59364bbebd1c840445
ethz.ecitpid
pub:18684
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-18T10:51:09Z
ethz.rosetta.lastUpdated
2017-07-18T10:51:09Z
ethz.rosetta.versionExported
true
ethz.COinS
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