Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates

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Author
Scaccabarozzi, Andrea
Bietti, Sergio
Fedorov, Alexey
von Känel, Hans
Miglio, Leo
Sanguinetti, Stefano
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Date
2014
Type
    Conference Paper
Publication status
published
External links
Journal / series
Journal of Crystal Growth
Volume
401
Pages / Article No.
559 - 562
Publisher
Elsevier
Event
17th International Conference on Crystal Growth and Epitaxy ICCGE-17, Warsaw, Poland, August 11-16, 2013
Subject
A1. Stresses; A1. Substrates; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide
Organisational unit
03569 - Batlogg, Bertram (emeritus)  
Notes
Published online 28 January 2014.
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