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dc.contributor.author
Yazdani, Nuri
dc.contributor.author
Chawla, Vipin
dc.contributor.author
Edwards, Eve
dc.contributor.author
Wood, Vanessa
dc.contributor.author
Park, Hyung Gyu
dc.contributor.author
Utke, Ivo
dc.date.accessioned
2019-08-29T11:57:38Z
dc.date.available
2017-06-11T06:49:31Z
dc.date.available
2019-08-29T11:57:38Z
dc.date.issued
2014-03-05
dc.identifier.issn
2190-4286
dc.identifier.other
10.3762/bjnano.5.25
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/82417
dc.identifier.doi
10.3929/ethz-b-000082417
dc.description.abstract
Many energy conversion and storage devices exploit structured ceramics with large interfacial surface areas. Vertically aligned carbon nanotube (VACNT) arrays have emerged as possible scaffolds to support large surface area ceramic layers. However, obtaining conformal and uniform coatings of ceramics on structures with high aspect ratio morphologies is non-trivial, even with atomic layer deposition (ALD). Here we implement a diffusion model to investigate the effect of the ALD parameters on coating kinetics and use it to develop a guideline for achieving conformal and uniform thickness coatings throughout the depth of ultra-high aspect ratio structures. We validate the model predictions with experimental data from ALD coatings of VACNT arrays. However, the approach can be applied to predict film conformality as a function of depth for any porous topology, including nanopores and nanowire arrays.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Beilstein-Institut zur Förderung der Chemischen Wissenschaften
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/2.0/
dc.subject
Atomic layer deposition
en_US
dc.subject
Vertically aligned carbon nanotubes
en_US
dc.subject
Continuum diffusion model
en_US
dc.subject
Conformal coating guidelines
en_US
dc.subject
Titania
en_US
dc.subject
TiO2
en_US
dc.title
Modeling and optimization of atomic layer deposition processes on vertically aligned carbon nanotubes
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 2.0 Generic
ethz.journal.title
Beilstein Journal of Nanotechnology
ethz.journal.volume
5
en_US
ethz.journal.abbreviated
Beilstein j. nanotechnol.
ethz.pages.start
234
en_US
ethz.pages.end
244
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.publication.place
Frankfurt am Main
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02634 - Institut für Elektronik / Institute for Electronics::03895 - Wood, Vanessa / Wood, Vanessa
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02130 - Dep. Maschinenbau und Verfahrenstechnik / Dep. of Mechanical and Process Eng.::03843 - Park, Hyung Gyu (ehemalig) / Park, Hyung Gyu (former)
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02634 - Institut für Elektronik / Institute for Electronics::03895 - Wood, Vanessa / Wood, Vanessa
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02130 - Dep. Maschinenbau und Verfahrenstechnik / Dep. of Mechanical and Process Eng.::03843 - Park, Hyung Gyu (ehemalig) / Park, Hyung Gyu (former)
ethz.date.deposited
2017-06-11T06:52:39Z
ethz.source
ECIT
ethz.identifier.importid
imp593651c5ebfd285201
ethz.ecitpid
pub:129967
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-15T04:12:55Z
ethz.rosetta.lastUpdated
2021-02-15T05:46:15Z
ethz.rosetta.versionExported
true
ethz.COinS
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