Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP/InGaAsP
- Journal Article
Journal / seriesJournal of vacuum science & technology : an international journal devoted to microelectronics and nanometer structures : processing, measurement, and phenomena. Series 2. B
Pages / Article No.
PublisherAmerican Institute of Physics
Subjectindium compounds; gallium arsenide; gallium compounds; III-V semiconductors; photonic crystals; sputter etching; optical fabrication; surface roughness; passivation; integrated optics; optical communication equipment
Organisational unit03386 - Jäckel, Heinz
NotesReceived 5 October 2006, Accepted 30 January 2007, Published 6 March 2007.
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