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dc.contributor.author
Strasser, P.
dc.contributor.author
Wüest, R.
dc.contributor.author
Robin, F.
dc.contributor.author
Erni, S.
dc.contributor.author
Jäckel, H.
dc.date.accessioned
2017-06-08T18:13:54Z
dc.date.available
2017-06-08T18:13:54Z
dc.date.issued
2007
dc.identifier.issn
1071-1023
dc.identifier.issn
0734-211X
dc.identifier.other
10.1116/1.2712198
dc.identifier.uri
http://hdl.handle.net/20.500.11850/8562
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.subject
indium compounds
dc.subject
gallium arsenide
dc.subject
gallium compounds
dc.subject
III-V semiconductors
dc.subject
photonic crystals
dc.subject
sputter etching
dc.subject
optical fabrication
dc.subject
surface roughness
dc.subject
passivation
dc.subject
integrated optics
dc.subject
optical communication equipment
dc.title
Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP/InGaAsP
dc.type
Journal Article
ethz.journal.title
Journal of vacuum science & technology : an international journal devoted to microelectronics and nanometer structures : processing, measurement, and phenomena. Series 2. B
ethz.journal.volume
25
ethz.journal.issue
2
ethz.pages.start
387
ethz.pages.end
393
ethz.notes
Received 5 October 2006, Accepted 30 January 2007, Published 6 March 2007.
ethz.identifier.wos
ethz.identifier.nebis
000604586
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
03386 - Jäckel, Heinz
ethz.leitzahl.certified
03386 - Jäckel, Heinz
ethz.date.deposited
2017-06-08T18:14:00Z
ethz.source
ECIT
ethz.identifier.importid
imp59364bc9abe7b36901
ethz.ecitpid
pub:19326
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-13T08:26:24Z
ethz.rosetta.lastUpdated
2017-07-13T08:26:24Z
ethz.rosetta.versionExported
true
ethz.COinS
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