Highly strained Si and Ge microand nanobridges for micro- and optoelectronic applications

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Author
Süess, Martin. J.
Date
2014
Type
    Doctoral Thesis
Rights / license
In Copyright - Non-Commercial Use Permitted
Permanent link
https://doi.org/10.3929/ethz-a-010182474
Publication status
published
External links
Search print copy at ETH Library
Contributors
Examiner: Spolenak, Ralph
Examiner: Sigg, Hans
Publisher
ETH-Zürich
Subject
KOMPLEMENTÄRE METALLOXID-HALBLEITERSCHALTUNGEN, CMOS (MIKROELEKTRONIK); GERMANIUM (CHEMICAL ELEMENTS); OPTOELECTRONIC DEVICES + PHOTOELECTRONIC DEVICES (OPTOELECTRONICS); SILICON (CHEMICAL ELEMENTS); GERMANIUM (CHEMISCHE ELEMENTE); SILICIUM (CHEMISCHE ELEMENTE); OPTOELEKTRONISCHE BAUELEMENTE + PHOTOELEKTRONISCHE BAUELEMENTE (OPTOELEKTRONIK); COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR CIRCUITS, CMOS (MICROELECTRONICS)
Organisational unit
01314 - DR Materialwissenschaft / DR Materials Science
02160 - Dep. Materialwissenschaft / Dep. of Materials
03692 - Spolenak, Ralph / Spolenak, Ralph  
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