Highly strained Si and Ge microand nanobridges for micro- and optoelectronic applications

Süess, Martin. J.

doi:10.3929/ethz-a-010182474

Zur Kurzanzeige

dc.contributor.author

Süess, Martin. J.

dc.contributor.supervisor

Spolenak, Ralph

dc.contributor.supervisor

Sigg, Hans

dc.date.accessioned

2017-10-25T09:10:15Z

dc.date.available

2017-06-11T10:04:20Z

dc.date.available

2017-10-25T09:10:15Z

dc.date.issued

2014

dc.identifier.uri

http://hdl.handle.net/20.500.11850/85765

dc.identifier.doi

10.3929/ethz-a-010182474

dc.format

application/pdf

dc.language.iso

en

en_US

dc.publisher

ETH-Zürich

en_US

dc.rights.uri

http://rightsstatements.org/page/InC-NC/1.0/

dc.subject

KOMPLEMENTÄRE METALLOXID-HALBLEITERSCHALTUNGEN, CMOS (MIKROELEKTRONIK)

en_US

dc.subject

GERMANIUM (CHEMICAL ELEMENTS)

en_US

dc.subject

OPTOELECTRONIC DEVICES + PHOTOELECTRONIC DEVICES (OPTOELECTRONICS)

en_US

dc.subject

SILICON (CHEMICAL ELEMENTS)

en_US

dc.subject

GERMANIUM (CHEMISCHE ELEMENTE)

en_US

dc.subject

SILICIUM (CHEMISCHE ELEMENTE)

en_US

dc.subject

OPTOELEKTRONISCHE BAUELEMENTE + PHOTOELEKTRONISCHE BAUELEMENTE (OPTOELEKTRONIK)

en_US

dc.subject

COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR CIRCUITS, CMOS (MICROELECTRONICS)

en_US

dc.title

Highly strained Si and Ge microand nanobridges for micro- and optoelectronic applications

en_US

dc.type

Doctoral Thesis

dc.rights.license

In Copyright - Non-Commercial Use Permitted

dc.date.published

2014

ethz.size

1 Band

en_US

ethz.code.ddc

DDC - DDC::6 - Technology, medicine and applied sciences::621.3 - Electric engineering

en_US

ethz.code.ddc

DDC - DDC::6 - Technology, medicine and applied sciences::621.3 - Electric engineering

en_US

ethz.identifier.diss

21952

en_US

ethz.identifier.nebis

010182474

ethz.publication.place

Zürich

en_US

ethz.publication.status

published

en_US

ethz.leitzahl

ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials::01309 - Lehre Materialwissenschaft::01307 - SR Materialwiss.::01314 - DR Materialwissenschaft / DR Materials Science

en_US

ethz.leitzahl

ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials

en_US

ethz.leitzahl

ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials::02645 - Institut für Metallforschung / Institute of Metals Research::03692 - Spolenak, Ralph / Spolenak, Ralph

en_US

ethz.leitzahl.certified

ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials::02645 - Institut für Metallforschung / Institute of Metals Research::03692 - Spolenak, Ralph / Spolenak, Ralph

ethz.date.deposited

2017-06-11T10:05:01Z

ethz.source

ECOL

ethz.source

ECIT

ethz.identifier.importid

imp59366b5f20ceb95500

ethz.identifier.importid

imp593652077db6f79069

ethz.ecolpid

eth:8790

ethz.ecitpid

pub:135087

ethz.eth

yes

en_US

ethz.availability

Open access

en_US

ethz.rosetta.installDate

2017-08-01T10:37:22Z

ethz.rosetta.lastUpdated

2022-03-28T17:50:58Z

ethz.rosetta.versionExported

true

ethz.COinS

ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Highly%20strained%20Si%20and%20Ge%20microand%20nanobridges%20for%20micro-%20and%20optoelectronic%20applications&rft.date=2014&rft.au=S%C3%BCess,%20Martin.%20J.&rft.genre=unknown&rft.btitle=Highly%20strained%20Si%20and%20Ge%20microand%20nanobridges%20for%20micro-%20and%20optoelectronic%20applications

Printexemplar via ETH-Bibliothek suchen