Retention in nonvolatile silicon transistors with an organic ferroelectric gate
Publication status
publishedExternal links
Journal / series
Applied Physics LettersVolume
Pages / Article No.
Publisher
American Institute of PhysicsSubject
Dielectric polarisation; Elemental semiconductors; Ferroelectric materials; Ferroelectric storage; MOSFET; Permittivity; Polymer blends; Random-access storage; Semiconductor storage; SiliconNotes
Received 10 February 2009, Accepted 28 May 2009, Published online 1 July 2009.More
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