Retention in nonvolatile silicon transistors with an organic ferroelectric gate

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Autor(in)
Gysel, Roman
Stolichnov, Igor
Tagantsev, Alexander K.
Riester, Sebastian W. E.
Setter, Nava
Salvatore, Giovanni A.
Bouvet, Didier
Ionescu, Adrian M.
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Datum
2009-06
Typ
    Journal Article
Publikationsstatus
published
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Zeitschrift / Serie
Applied Physics Letters
Band
94(26)
Seiten / Artikelnummer
263507-1 - 263507-3
Verlag
American Institute of Physics
Thema
Dielectric polarisation; Elemental semiconductors; Ferroelectric materials; Ferroelectric storage; MOSFET; Permittivity; Polymer blends; Random-access storage; Semiconductor storage; Silicon
Anmerkungen
Received 10 February 2009, Accepted 28 May 2009, Published online 1 July 2009.
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