Retention in nonvolatile silicon transistors with an organic ferroelectric gate
dc.contributor.author
Gysel, Roman
dc.contributor.author
Stolichnov, Igor
dc.contributor.author
Tagantsev, Alexander K.
dc.contributor.author
Riester, Sebastian W. E.
dc.contributor.author
Setter, Nava
dc.contributor.author
Salvatore, Giovanni A.
dc.contributor.author
Bouvet, Didier
dc.contributor.author
Ionescu, Adrian M.
dc.date.accessioned
2017-06-11T11:14:48Z
dc.date.available
2017-06-11T11:14:48Z
dc.date.issued
2009-06
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.3158959
dc.identifier.uri
http://hdl.handle.net/20.500.11850/86985
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.subject
Dielectric polarisation
dc.subject
Elemental semiconductors
dc.subject
Ferroelectric materials
dc.subject
Ferroelectric storage
dc.subject
MOSFET
dc.subject
Permittivity
dc.subject
Polymer blends
dc.subject
Random-access storage
dc.subject
Semiconductor storage
dc.subject
Silicon
dc.title
Retention in nonvolatile silicon transistors with an organic ferroelectric gate
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
94
ethz.journal.issue
26
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
263507-1
ethz.pages.end
263507-3
ethz.size
4 p.
ethz.notes
Received 10 February 2009, Accepted 28 May 2009, Published online 1 July 2009.
ethz.identifier.wos
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.date.deposited
2017-06-11T11:18:15Z
ethz.source
ECIT
ethz.identifier.importid
imp5936521eb5ac323808
ethz.ecitpid
pub:136908
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-13T16:12:23Z
ethz.rosetta.lastUpdated
2024-02-01T22:01:06Z
ethz.rosetta.versionExported
true
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