Focused ion beam iodine-enhanced etching of high aspect ratio holes in InP photonic crystals
dc.contributor.author
Callegari, Victor
dc.contributor.author
Nellen, P. M.
dc.contributor.author
Kaufmann, J.
dc.contributor.author
Strasser, P.
dc.contributor.author
Robin, F.
dc.contributor.author
Sennhauser, U.
dc.date.accessioned
2017-06-08T18:19:54Z
dc.date.available
2017-06-08T18:19:54Z
dc.date.issued
2007
dc.identifier.issn
1071-1023
dc.identifier.issn
0734-211X
dc.identifier.other
10.1116/1.2804607
dc.identifier.uri
http://hdl.handle.net/20.500.11850/8840
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Focused ion beam iodine-enhanced etching of high aspect ratio holes in InP photonic crystals
dc.type
Journal Article
ethz.journal.title
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ethz.journal.volume
25
ethz.journal.issue
6
ethz.journal.abbreviated
J. Vac. Sci. Technol. B
ethz.pages.start
2175
ethz.pages.end
2179
ethz.notes
Titelvariante: JVST B. Received 10 June 2007. Accepted 8 October 2007. Published 7 December 2007..
ethz.identifier.wos
ethz.identifier.nebis
000604586
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
03386 - Jäckel, Heinz
ethz.leitzahl.certified
03386 - Jäckel, Heinz
ethz.date.deposited
2017-06-08T18:20:03Z
ethz.source
ECIT
ethz.identifier.importid
imp59364bcf4506a48630
ethz.ecitpid
pub:19643
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-20T15:16:43Z
ethz.rosetta.lastUpdated
2022-03-28T07:48:19Z
ethz.rosetta.versionExported
true
ethz.COinS
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Journal Article [130735]