Crystal growth of hexagonal boron nitride (hBN) from Mg-B-N solvent system under high pressure
- Journal Article
Journal / seriesJournal of Crystal Growth
Pages / Article No.
SubjectHigh pressure method; Single oystal growth; Hexagonal boron nitride; Semiconducting III-V materials
Organisational unit03569 - Batlogg, Bertram (emeritus)
NotesReceived 28 May 2014, Received in revised form 17 June 2014, Accepted 19 June 2014, Available online 25 June 2014.
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