Crystal growth of hexagonal boron nitride (hBN) from Mg-B-N solvent system under high pressure
dc.contributor.author
Zhigadlo, Nikolai D.
dc.date.accessioned
2017-06-11T12:04:43Z
dc.date.available
2017-06-11T12:04:43Z
dc.date.issued
2014
dc.identifier.issn
0022-0248
dc.identifier.issn
1873-5002
dc.identifier.other
10.1016/j.jcrysgro.2014.06.038
dc.identifier.uri
http://hdl.handle.net/20.500.11850/88449
dc.language.iso
en
dc.publisher
Elsevier
dc.subject
High pressure method
dc.subject
Single oystal growth
dc.subject
Hexagonal boron nitride
dc.subject
Semiconducting III-V materials
dc.title
Crystal growth of hexagonal boron nitride (hBN) from Mg-B-N solvent system under high pressure
dc.type
Journal Article
ethz.journal.title
Journal of Crystal Growth
ethz.journal.volume
402
ethz.journal.abbreviated
J Cryst Growth
ethz.pages.start
308
ethz.pages.end
311
ethz.notes
Received 28 May 2014, Received in revised form 17 June 2014, Accepted 19 June 2014, Available online 25 June 2014.
ethz.identifier.wos
ethz.identifier.nebis
000049301
ethz.publication.place
Amsterdam
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.date.deposited
2017-06-11T12:04:58Z
ethz.source
ECIT
ethz.identifier.importid
imp5936523bd595225931
ethz.ecitpid
pub:139196
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-12T11:15:09Z
ethz.rosetta.lastUpdated
2020-02-14T14:07:27Z
ethz.rosetta.versionExported
true
ethz.COinS
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