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dc.contributor.author
Rudan, Massimo
dc.contributor.author
Reggiani, Susanna
dc.contributor.author
Gnani, Elena
dc.contributor.author
Baccarani, Giorgio
dc.contributor.author
Corvasce, Chiara
dc.contributor.author
Barlini, Davide
dc.contributor.author
Ciappa, Mauro
dc.contributor.author
Fichtner, Wolfgang
dc.contributor.author
Denison, Marie
dc.contributor.author
Jensen, Nils
dc.contributor.author
Groos, Gerhard
dc.contributor.author
Stecher, Matthias
dc.date.accessioned
2019-06-13T07:11:54Z
dc.date.available
2017-06-11T13:41:38Z
dc.date.available
2019-06-13T07:11:54Z
dc.date.issued
2005
dc.identifier.other
10.1109/ESSDER.2005.1546711
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/92264
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
Hall effect
en_US
dc.subject
semiconductor device models
en_US
dc.title
Experimental Validation of a New Analytical Model for the Position-Dependent Hall Voltage in Semiconductor Devices
en_US
dc.type
Other Conference Item
dc.date.published
2005-12-12
ethz.book.title
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.
en_US
ethz.pages.start
565
en_US
ethz.pages.end
568
en_US
ethz.event
35th European Solid-State Device Research Conference, ESSDERC 2005
en_US
ethz.event.location
Grenoble, France
en_US
ethz.event.date
September 12-16, 2005
en_US
ethz.publication.place
Piscataway, N.J.
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
03228 - Fichtner, Wolfgang
en_US
ethz.leitzahl.certified
03228 - Fichtner, Wolfgang
ethz.date.deposited
2017-06-11T13:41:54Z
ethz.source
ECIT
ethz.identifier.importid
imp5936528443f7777752
ethz.ecitpid
pub:145178
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2017-07-19T08:03:42Z
ethz.rosetta.lastUpdated
2019-06-13T07:12:03Z
ethz.rosetta.exportRequired
false
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Experimental%20Validation%20of%20a%20New%20Analytical%20Model%20for%20the%20Position-Dependent%20Hall%20Voltage%20in%20Semiconductor%20Devices&rft.date=2005&rft.spage=565&rft.epage=568&rft.au=Rudan,%20Massimo&Reggiani,%20Susanna&Gnani,%20Elena&Baccarani,%20Giorgio&Corvasce,%20Chiara&rft.genre=unknown&rft.btitle=Proceedings%20of%2035th%20European%20Solid-State%20Device%20Research%20Conference,%202005.%20ESSDERC%202005.
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