Abstract
Plasmonic memristors are electrically activated optical switches with a memory effect. This effect is important for a new generation of latching optical switches that maintain their state without power consumption. It is also of interest for new optical memories that can be activated by a single electrical write/erase impulse. The operation principle is based on the reversible formation of a conductive path in the dielectric layer of a plasmonic metal–insulator–metal waveguide. Extinction ratios of 12 dB (6 dB) are demonstrated in 10 μm (5 μm) long devices for operating voltages of ±2 V. With this, the devices feature the characteristics of electronic resistive random access memory, but for the field of plasmonics. Such plasmonic memristors are interesting in view of new applications in information storage and for low power circuit switching. Show more
Publication status
publishedExternal links
Journal / series
OpticaVolume
Pages / Article No.
Publisher
OSA PublishingOrganisational unit
03974 - Leuthold, Juerg / Leuthold, Juerg
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