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dc.contributor.author
Sant, Saurabh
dc.contributor.author
Schenk, Andreas
dc.date.accessioned
2017-11-07T16:22:36Z
dc.date.available
2017-06-11T13:43:42Z
dc.date.available
2017-11-07T16:22:36Z
dc.date.issued
2014-10
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.4898676
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/92323
dc.language.iso
en
en_US
dc.publisher
American Institute of Physics
en_US
dc.title
Pseudopotential calculations of strained-GeSn/SiGeSn hetero-structures
en_US
dc.type
Journal Article
dc.date.published
2014-10-20
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
105
en_US
ethz.journal.issue
16
en_US
ethz.journal.abbreviated
Appl. phys. lett.
ethz.pages.start
162101
en_US
ethz.size
5 p.
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.relation.isReferencedBy
handle/20.500.11850/100370
ethz.date.deposited
2017-06-11T13:44:19Z
ethz.source
ECIT
ethz.identifier.importid
imp593652856e18432585
ethz.ecitpid
pub:145361
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2017-07-25T18:52:50Z
ethz.rosetta.lastUpdated
2018-11-06T00:44:00Z
ethz.rosetta.versionExported
true
ethz.COinS
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