Excess carrier lifetimes in Ge layers on Si - Research Collection

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Author

Faist, Jérôme

Date

2014

Type

Journal Article

ETH Bibliography

yes

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Publication status

published

External links

https://doi.org/10.1063/1.4865237

Journal / series

Applied Physics Letters

Volume

104(6)

Pages / Article No.

062106

Publisher

American Institute of Physics

Organisational unit

03759 - Faist, Jérôme / Faist, Jérôme

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ETH Bibliography

yes

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