94-GHz large-signal operation of AlInN/GaN high-electron-mobility transistors on silicon with regrown ohmic contacts

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Author
Marti, Diego
Tirelli, Stefano
Teppati, Valeria
Lugani, Lorenzo
Carlin, Jean François
Malinverni, Marco
Grandjean, Nicolas R.
Bolognesi, Colombo R.
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Date
2015
Type
  • Journal Article
Publication status
published
External links
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Journal / series
IEEE Electron Device Letters
Volume
36(1)
Pages / Article No.
17 - 19
Publisher
IEEE
Subject
AlInN/GaN on Si; HEMTs; large-signal; load-pull characterization
Organisational unit
03721 - Bolognesi, Colombo  
Notes
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Citations
Cited 15 times in Web of Science
ETH Bibliography
yes
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