94-GHz large-signal operation of AlInN/GaN high-electron-mobility transistors on silicon with regrown ohmic contacts
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Date
2015Type
- Journal Article
Citations
Cited 23 times in
Web of Science
Cited 29 times in
Scopus
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
IEEE Electron Device LettersVolume
Pages / Article No.
Publisher
IEEESubject
AlInN/GaN on Si; HEMTs; large-signal; load-pull characterizationOrganisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
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Show all metadata
Citations
Cited 23 times in
Web of Science
Cited 29 times in
Scopus
ETH Bibliography
yes
Altmetrics