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dc.contributor.author
Reichl, Christian
dc.contributor.supervisor
Wegscheider, Werner
dc.contributor.supervisor
Ensslin, Klaus
dc.date.accessioned
2017-10-19T08:13:30Z
dc.date.available
2017-06-11T15:12:11Z
dc.date.available
2017-10-19T08:13:30Z
dc.date.issued
2014
dc.identifier.uri
http://hdl.handle.net/20.500.11850/95698
dc.identifier.doi
10.3929/ethz-a-010346766
dc.language.iso
en
en_US
dc.publisher
ETH-Zürich
en_US
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
MOLECULAR BEAM EPITAXY, MBE (PHYSICS OF MOLECULAR SYSTEMS)
en_US
dc.subject
ELEKTRONENZUSTÄNDE + ELEKTRONENSTRUKTUR (PHYSIK DER KONDENSIERTEN MATERIE)
en_US
dc.subject
ERZEUGUNG DÜNNER SCHICHTEN (PHYSIK VON MOLEKULARSYSTEMEN)
en_US
dc.subject
HALBLEITERMATERIALIEN (ELEKTROTECHNIK)
en_US
dc.subject
MOLEKULARSTRAHLEPITAXIE (PHYSIK VON MOLEKULARSYSTEMEN)
en_US
dc.subject
SEMICONDUCTOR MATERIALS (ELECTRICAL ENGINEERING)
en_US
dc.subject
PRODUCTION OF THIN FILMS (PHYSICS OF MOLECULAR SYSTEMS)
en_US
dc.subject
QUANTUM HALL EFFECT (MAGNETISM)
en_US
dc.subject
ELECTRON STATES + ELECTRONIC STRUCTURE (CONDENSED MATTER PHYSICS)
en_US
dc.subject
NIEDRIGDIMENSIONALE STRUKTUR (PHYSIK DER KONDENSIERTEN MATERIE)
en_US
dc.subject
LOW-DIMENSIONAL STRUCTURE (CONDENSED MATTER PHYSICS)
en_US
dc.subject
QUANTEN-HALL-EFFEKT (MAGNETISMUS)
en_US
dc.title
MBE growth of ultrahigh-mobility 2DEGs in GaAs/AlGaAs
en_US
dc.type
Doctoral Thesis
dc.rights.license
In Copyright - Non-Commercial Use Permitted
dc.date.published
2015
ethz.size
1 Band
en_US
ethz.code.ddc
5 - Science::530 - Physics
en_US
ethz.code.ddc
6 - Technology, medicine and applied sciences::621.3 - Electric engineering
en_US
ethz.identifier.diss
22343
en_US
ethz.identifier.nebis
010346766
ethz.publication.place
Zürich
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03833 - Wegscheider, Werner / Wegscheider, Werner
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03833 - Wegscheider, Werner / Wegscheider, Werner
ethz.date.deposited
2017-06-11T15:12:20Z
ethz.source
ECOL
ethz.source
ECIT
ethz.identifier.importid
imp593652c41051771269
ethz.identifier.importid
imp59366b6ba29e929947
ethz.ecolpid
eth:47188
ethz.ecitpid
pub:150063
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-13T17:00:54Z
ethz.rosetta.lastUpdated
2017-10-19T08:13:56Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=MBE%20growth%20of%20ultrahigh-mobility%202DEGs%20in%20GaAs/AlGaAs&rft.date=2014&rft.au=Reichl,%20Christian&rft.genre=unknown&rft.btitle=MBE%20growth%20of%20ultrahigh-mobility%202DEGs%20in%20GaAs/AlGaAs
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