Development of sub-millimeter-wave InP/GaAsSb double heterojunction bipolar transistors

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Author
Lövblom, Rickard
Date
2014
Type
  • Doctoral Thesis
Rights / license
In Copyright - Non-Commercial Use Permitted
Permanent link
https://doi.org/10.3929/ethz-a-010164622
Publication status
published
External links
http://dx.doi.org/10.3929/ethz-a-010164622
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Contributors
Supervisor: Schröter, Michael
Supervisor: Bolognesi, Colombo
Publisher
ETH-Zürich
Subject
ANTIMONY ALLOYS; GALLIUM-ARSENIC COMPOUNDS (INORGANIC CHEMISTRY); GALLIUM-ARSEN-VERBINDUNGEN (ANORGANISCHE CHEMIE); BIPOLAR TRANSISTORS (ELECTRONICS); SUBMILLIMETERWELLEN, 300 GHZ BIS 3000 GHZ (ELEKTROTECHNIK); BIPOLARE TRANSISTOREN (ELEKTRONIK); INDIUMPHOSPHID (ANORGANISCHE CHEMIE); SUBMILLIMETRIC WAVES, 300 GHZ TO 3000 GHZ (ELECTRICAL ENGINEERING); ANTIMONLEGIERUNGEN; INDIUM PHOSPHIDES (INORGANIC CHEMISTRY)
Organisational unit
02140 - Departement Informationstechnologie und Elektrotechnik / Department of Information Technology and Electrical Engineering
03721 - Bolognesi, Colombo
Notes
Diss., Eidgenössische Technische Hochschule ETH Zürich, Nr. 21816, 2014.
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