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dc.contributor.author
Szabo, Aron
dc.contributor.author
Rhyner, Reto
dc.contributor.author
Luisier, Mathieu
dc.date.accessioned
2017-06-11T15:43:57Z
dc.date.available
2017-06-11T15:43:57Z
dc.date.issued
2014
dc.identifier.isbn
978-1-4799-8001-7
dc.identifier.isbn
978-1-4799-8000-0
dc.identifier.isbn
978-1-4799-8002-4
dc.identifier.other
10.1109/IEDM.2014.7047142
dc.identifier.uri
http://hdl.handle.net/20.500.11850/97005
dc.language.iso
en
dc.publisher
IEEE
dc.title
Ab-Initio Simulations of MoS2 Transistors: from Mobility Calculation to Device Performance Evaluation
dc.type
Conference Paper
ethz.book.title
IEEE International Electron Devices Meeting (IEDM), 2014 : 15 - 17 Dec. 2014, San Francisco, CA
ethz.pages.start
30.4.1
ethz.size
4 p.
ethz.event
2014 IEEE International Electron Devices Meeting (IEDM)
ethz.event.location
San Francisco, CA, USA
ethz.event.date
December 15-17, 2014
ethz.publication.place
Piscataway, NJ
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.date.deposited
2017-06-11T15:44:31Z
ethz.source
ECIT
ethz.identifier.importid
imp593652dacf7a311096
ethz.ecitpid
pub:151891
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-18T12:19:23Z
ethz.rosetta.lastUpdated
2018-11-02T18:05:46Z
ethz.rosetta.versionExported
true
ethz.COinS
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