Modeling the Threshold Voltage Instability in SiC MOSFETs at High Operating Temperature

Metadata only

Author

Date

2014

Type

Conference Paper

ETH Bibliography

yes

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Publication status

published

Book title

2014 IEEE International Reliability Physics Symposium (IRPS 2014) : 1 - 5 June 2014, Waikoloa, HI

Pages / Article No.

2C.4.1

Publisher

IEEE

Event

2014 IEEE International Reliability Physics Symposium, Waikoloa, HI, USA, June 1-5, 2014

Subject

Silicon Carbide MOS; Threshold voltage instability; Gate bias stress; TCAD model; Phonon-assisted tunneling

Organisational unit

03380 - Huang, Qiuting (emeritus) / Huang, Qiuting (emeritus)

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ETH Bibliography

yes

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