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dc.contributor.author
Kikuchi, Takuo
dc.contributor.author
Ciappa, Mauro
dc.date.accessioned
2017-06-11T15:44:05Z
dc.date.available
2017-06-11T15:44:05Z
dc.date.issued
2014
dc.identifier.isbn
978-1-4799-3317-4
dc.identifier.isbn
978-1-4799-3318-1
dc.identifier.isbn
978-1-4799-3316-7
dc.identifier.uri
http://hdl.handle.net/20.500.11850/97023
dc.language.iso
en
dc.publisher
IEEE
dc.subject
Silicon Carbide MOS
dc.subject
Threshold voltage instability
dc.subject
Gate bias stress
dc.subject
TCAD model
dc.subject
Phonon-assisted tunneling
dc.title
Modeling the Threshold Voltage Instability in SiC MOSFETs at High Operating Temperature
dc.type
Conference Paper
ethz.book.title
2014 IEEE International Reliability Physics Symposium (IRPS 2014) : 1 - 5 June 2014, Waikoloa, HI
ethz.pages.start
2C.4.1
ethz.size
6 p.
ethz.event
2014 IEEE International Reliability Physics Symposium
ethz.event.location
Waikoloa, HI, USA
ethz.event.date
June 1-5, 2014
ethz.identifier.nebis
010350770
ethz.publication.place
Piscataway, NJ
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03380 - Huang, Qiuting (emeritus) / Huang, Qiuting (emeritus)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03380 - Huang, Qiuting (emeritus) / Huang, Qiuting (emeritus)
ethz.date.deposited
2017-06-11T15:44:31Z
ethz.source
ECIT
ethz.identifier.importid
imp593652db1bbb349384
ethz.ecitpid
pub:151917
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-18T12:20:09Z
ethz.rosetta.lastUpdated
2022-03-28T13:36:42Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Modeling%20the%20Threshold%20Voltage%20Instability%20in%20SiC%20MOSFETs%20at%20High%20Operating%20Temperature&rft.date=2014&rft.spage=2C.4.1&rft.au=Kikuchi,%20Takuo&Ciappa,%20Mauro&rft.isbn=978-1-4799-3317-4&978-1-4799-3318-1&978-1-4799-3316-7&rft.genre=proceeding&rft.btitle=2014%20IEEE%20International%20Reliability%20Physics%20Symposium%20(IRPS%202014)%20:%201%20-%205%20June%202014,%20Waikoloa,%20HI
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