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dc.contributor.author
Schneider, H.
dc.contributor.author
Liu, H. C.
dc.contributor.author
Winnerl, S.
dc.contributor.author
Drachenko, O.
dc.contributor.author
Helm, M.
dc.contributor.author
Faist, Jérôme
dc.date.accessioned
2017-06-08T19:03:02Z
dc.date.available
2017-06-08T19:03:02Z
dc.date.issued
2008
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.2977864
dc.identifier.uri
http://hdl.handle.net/20.500.11850/9812
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.subject
aluminium compounds
dc.subject
gallium arsenide
dc.subject
gallium compounds
dc.subject
III-V semiconductors
dc.subject
indium compounds
dc.subject
infrared detectors
dc.subject
photodetectors
dc.subject
semiconductor quantum wells
dc.title
Room-temperature midinfrared two-photon photodetector
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
93
ethz.journal.issue
10
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
10114-1
ethz.pages.end
10114-3
ethz.notes
Received 26 June 2008. accepted 14 August 2008. published 12 September 2008.
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-08T19:03:10Z
ethz.source
ECIT
ethz.identifier.importid
imp59364be301edc35907
ethz.ecitpid
pub:20770
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-15T16:00:23Z
ethz.rosetta.lastUpdated
2022-03-28T07:52:29Z
ethz.rosetta.versionExported
true
ethz.COinS
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