Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data
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Date
2004Type
- Journal Article
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
Applied Physics LettersVolume
Pages / Article No.
Publisher
American Institute of PhysicsOrganisational unit
03575 - Parrinello, Michele (ehemalig) / Parrinello, Michele (former)
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ETH Bibliography
yes
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