Fully-Passivated AlInN/GaN HEMTs with ft = fmax > 180 GHz
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Author / Producer
Date
2011
Publication Type
Conference Paper
ETH Bibliography
yes
Citations
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Data
Rights / License
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Publication status
published
External links
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Book title
Journal / series
Volume
Pages / Article No.
Publisher
9th International Conference on Nitride Semiconductors (ICNS 2011)
Event
9th International Conference on Nitride Semiconductors (ICNS 2011)
Edition / version
Methods
Software
Geographic location
Date collected
Date created
Subject
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
Notes
Conference lecture on 12 July 2011.