Tunable few-electron quantum dots in InAs nanowires
METADATA ONLY
Loading...
Author / Producer
Date
2007-01-31
Publication Type
Conference Paper
ETH Bibliography
yes
Citations
Altmetric
METADATA ONLY
Data
Rights / License
Abstract
Quantum dots realized in InAs are versatile systems to study the effect of spin–orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top gates are used to locally deplete the nanowire and to form tunnelling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs.
Permanent link
Publication status
published
External links
Editor
Book title
Journal / series
Volume
18 (4)
Pages / Article No.
44014
Publisher
IOP Publishing
Event
International Conference on Nanoscience and Technology (ICN&T 2006)
Edition / version
Methods
Software
Geographic location
Date collected
Date created
Subject
Organisational unit
03439 - Ensslin, Klaus / Ensslin, Klaus