Ultra-steep-slope transistor enabled by an atomic memristive switch
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Author / Producer
Date
2020-08-21
Publication Type
Conference Paper
ETH Bibliography
yes
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Abstract
An ultra-compact 3D memristive atomic switch is co-integrated with a field-effect transistor (FET). The combined devices outperform similar state-of-the-art arrangements. The integrated transistor operates with an extremely sharp switching slope of below 3 mV/dec, low leakage below pA and a high current on/off ratio Ion/Ioff < 106. Moreover, our atomic switch features a < 10 ns switching and a < 300 mV operating voltage. Most importantly, the atomic switch has a small footprint of < 10 nm by 10 nm in line with the extreme feature size of the current FET technologies. Thus, this design could addresses the future needs of integrated circuits (ICs) for high integration density at low power consumption. © 2020 Society of Photo-Optical Instrumentation Engineers.
Permanent link
Publication status
published
External links
Book title
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII
Journal / series
Volume
11467
Pages / Article No.
Publisher
SPIE
Event
SPIE Nanoscience + Engineering 2020
Edition / version
Methods
Software
Geographic location
Date collected
Date created
Subject
Steep slope; Field effect transistor; Very large scale integration; Sub threshold; Resistive switching; Low-power electronics; Memristor
Organisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
03974 - Leuthold, Juerg / Leuthold, Juerg
02635 - Institut für Elektromagnetische Felder / Institute of Electromagnetic Fields
Notes
Due to the Coronavirus (COVID-19) the conference was conducted virtually.