Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast
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Author / Producer
Date
2005
Publication Type
Conference Paper
ETH Bibliography
yes
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Publication status
published
Editor
Book title
Journal / series
Volume
45 (9-11)
Pages / Article No.
1499 - 1504
Publisher
Elsevier
Event
16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Edition / version
Methods
Software
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Date collected
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Subject
Organisational unit
03228 - Fichtner, Wolfgang (emeritus)