Untersuchung des physikalischen Verhaltens von lateralen Vierschichtstrukturen zum Schutz vor elektrostatischen Entladungen in CMOS integrierten Schaltungen
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Date
1994
Publication Type
Doctoral Thesis
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published
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Examiner : Jaecklin, André August
Examiner : Melchior, Hans
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Publisher
ETH Zürich
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Subject
KOMPLEMENTÄRE METALLOXID-HALBLEITERSCHALTUNGEN, CMOS (MIKROELEKTRONIK); STATISCHE LADUNG UND ENTLADUNG (ELEKTROSTATIK); THYRISTOREN (ELEKTRONIK); LAYOUTS/MIKROELEKTRONIK; MULTISCHICHTEN (PHYSIK VON MOLEKULARSYSTEMEN); COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR CIRCUITS, CMOS (MICROELECTRONICS); STATIC CHARGE AND DISCHARGE (ELECTROSTATICS); THYRISTORS (ELECTRONICS); LAYOUTS/MICROELECTRONICS; MULTILAYERS (PHYSICS OF MOLECULAR SYSTEMS)
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Notes
Diss. Techn. Wiss. ETH Zürich, Nr. 10829, 1994. Ref.: H. Melchior ; Korref.: A. A. Jaecklin.