RF Performance Potential of Strained-Si, In0.53Ga0.47As, and GaSb Double-Gate Ultra-Thin-Body n-FETs with Lg=10.7 nm
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Date
2012
Publication Type
Conference Paper
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yes
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published
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IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 : 14 - 17 Oct. 2012, La Jolla, California, USA ; technical digest
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IEEE
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IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 2012
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03925 - Luisier, Mathieu / Luisier, Mathieu