Giacomo Scalari


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Last Name

Scalari

First Name

Giacomo

Organisational unit

03759 - Faist, Jérôme / Faist, Jérôme

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Publications 1 - 10 of 289
  • Scalari, Giacomo; Rösch, Markus; Beck, Mattias; et al. (2015)
    SPIE News
  • Cibella, Sara; Forrer, Andres; Beck, Mattias; et al. (2023)
    Proceedings of SPIE ~ Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XVI
    We studied the performance of hot-electron bolometers (HEBs) operating at THz optical frequencies based on superconducting niobium nitride films. We report on large optical bandwidth measurement of the voltage response of the detector carried out with different THz sources. We show that the impulse response of the fully packaged HEB at 7.5 K has a 3 dB cut-off around 2 GHz, but a considerable detection capability is also observed above 30 GHz recorded in mixing mode operation by using a THz frequency comb quantum cascade laser
  • Heckelmann, Ina; Pinto, Davide; Schmitt, Uwe; et al. (2025)
  • Enkner, Josefine Ulrike; Appugliese, Felice; Paravicini-Bagliani, Gian Lorenzo; et al. (2022)
    SPG Jahrestagung, 27.-30. Juni 2022 in Fribourg
  • Montanari, Michele; Ciano, Chiara; Persichetti, Luca; et al. (2021)
    Applied Physics Letters
    High-quality n-type continuously graded Ge-rich Si1−xGex parabolic quantum wells with different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on Si(001) substrates. A thorough structural characterization study highlights an ideal parabolic compositional profile. THz intersubband absorption has been investigated in modulation-doped samples and samples directly doped in the wells. The comparison of experimental absorption data and theoretical calculations allowed us to quantify the impact of electron correlation effects on the absorption resonances in the different doping conditions and for electron sheet densities in the (1÷6)×1011 cm−2 range. A single optical resonance is present in modulation doped samples. Its peak energy and line shape are independent of temperature-induced variations of the electron distribution in the subbands up to 300 K, in agreement with the generalized Kohn theorem. This achievement represents a relevant step forward for the development of CMOS compatible optoelectronic devices in the THz spectral range, where thermal charge fluctuations play a key role.
  • Amanti, Maria I.; Scalari, Giacomo; Terazzi, Romain; et al. (2009)
    New Journal of Physics
    A terahertz quantum cascade laser design that combines a wide gain bandwidth, large photon-driven transport and good high-temperature characteristics is presented. It relies on a diagonal transition between a bound state and doublet of states tunnel coupled to the upper state of a phonon extraction stage. The high optical efficiency of this design enables the observation of photon-driven transport over a wide current density range. The relative tolerance of the design to small variations in the barrier thicknesses made it suitable for testing different growth techniques and materials. In particular, we compared the performances of devices grown using molecular-beam epitaxy with those achieved using organometallic chemical vapor deposition. The low-threshold current density and the high slope efficiency makes this device an attractive active region for the development of single-mode quantum cascade lasers based on third-order-distributed feedback structures. Single-mode, high power was achieved with good continuous and pulsed wave operation.
  • Piciocchi, Diego; Dikopoltsev, Alex; Heckelmann, Ina; et al. (2025)
    2025 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
  • Ciano, Chiara; Virgilio, Michele; Bagolini, Luigi; et al. (2020)
    Optics Express
  • Forrer, Andres; Stark, David; Franckié, Martin; et al. (2019)
    2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
  • Senica, Urban; Gloor, Sebastian; Micheletti, Paolo; et al. (2022)
Publications 1 - 10 of 289