A Scaled Replacement Metal Gate InGaAs-on-Insulator n-FinFET on Si with Record Performance
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Author / Producer
Date
2017
Publication Type
Conference Paper
ETH Bibliography
yes
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Publication status
published
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Book title
2017 IEEE International Electron Devices Meeting (IEDM)
Journal / series
Volume
Pages / Article No.
Publisher
IEEE
Event
63rd IEEE Annual International Electron Devices Meeting (IEDM 2017)