Effect of hydrostatic pressure on the transport properties in magnetic semiconductors
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Date
2004-12
Publication Type
Conference Paper
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no
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Abstract
The effect of pressure on the ferromagnetic phase transition has been studied in manganese doped III-V semiconductors by electrical conductance and Hall measurements. We found that the application of hydrostatic pressure shifts the transition temperature upwards both in (In,Mn)Sb and (Ga,Mn)As. The anomalous-Hall coefficient shows a dramatic increase in the hysteresis loops in the ferromagnetic phase and an enhanced magnetization both below and above the phase transition. As the normal-Hall results suggest that the pressure does not change the carrier density [in (In,Mn)Sb] or rather decreases it [in (Ga,Mn)As], all the above observations are indicative of a pressure-induced enhancement of magnetic coupling.
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published
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Volume
1 (12)
Pages / Article No.
3571 - 3574
Publisher
Wiley-VCH
Event
2nd Seeheim Conference on Magnetism (SCM2004)
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02635 - Institut für Elektromagnetische Felder / Institute of Electromagnetic Fields