Theoretical and technological investigation of the gate structure of InP HEMTs for high-frequency and power applications
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Author / Producer
Date
2002
Publication Type
Doctoral Thesis
ETH Bibliography
yes
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published
External links
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Contributors
Examiner : Bächtold, Werner
Examiner : Jäckel, Heinz
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Subject
HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELEKTRONIK); HOCHFREQUENZ,HF, 30 KHZ BIS 30 MHZ (ELEKTROTECHNIK); LEISTUNGSVERSTÄRKER (ELEKTRISCHE SCHWINGUNGSTECHNIK); HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELECTRONICS); HIGH FREQUENCY, HF, 30 KHZ TO 30 MHZ (ELECTRICAL ENGINEERING); POWER AMPLIFIERS (ELECTRICAL OSCILLATION TECHNOLOGY)
Organisational unit
03262 - Bächtold, Werner (emeritus)
Notes
Diss., Technische Wissenschaften ETH Zürich, Nr. 14849, 2002.