Different current conduction mechanisms through thin high-k HfxTiySizO films due to the varying Hf to Ti ratio
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Date
2004-05
Publication Type
Journal Article
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yes
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published
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Volume
95 (10)
Pages / Article No.
5583 - 5590
Publisher
American Institute of Physics
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Subject
Hafnium compounds; Titanium compounds; Dielectric thin films; MOCVD; Permittivity; Electrical conductivity; Leakage currents; Stoichiometry
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Notes
Received 16 December 2003, Accepted 16 February 2004.