Henry Baltes
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Publications 1 - 5 of 5
- From transistors to microsensors: A memoirItem type: Book Chapter
75th Anniversary of the TransistorBaltes, Henry (2023)This is not a professional review, but a narrative of the author's personal historical perspective of the development of transistor-based microsensors and its evolution with new manufacturing process technologies including metal-oxide-semiconductor (CMOS) and micromachining. - A CMOS-based tactile sensor for continuous blood pressure monitoringItem type: Conference Paper
Design, Automation and Test in EuropeKirstein, Kay-Uwe; Sedivy, Jan; Salo, Tomi; et al. (2005)A monolithic integrated tactile sensor array is presented; it is used to perform non-invasive blood pressure monitoring of a patient. The advantage of this device compared to a hand cuff based approach is the capability of recording continuous blood pressure data. The capacitive, membrane-based sensor device is fabricated in an industrial CMOS-technology combined with post-CMOS micromachining. The capacitance change is detected by a /spl Sigma//spl Delta/-modulator. The modulator is operated at a sampling rate of 128 kS/s and achieves a resolution of 12 bits with an external decimation filter and an OSR of 128. - In Memoriam: Oliver Brand 1964-2023Item type: Other Journal Item
Journal of Microelectromechanical SystemsBaltes, Henry (2023) - Miniaturisierung eines Gassensorsystems für mehr Sicherheit am ArbeitsplatzItem type: Conference PaperKrauß, A.; Koll, Andreas; Lange, Dirk; et al. (2000)
- Towards a versatile DRIE: silicon pit structures combined with electrochemical etch stopItem type: Journal Article
Journal of Microelectromechanical SystemsKurzawski, Petra; Salo, Torni; Baltes, Henry; et al. (2006)A novel approach for fabricating low-pitch arrays of silicon membranes on standard CMOS wafers by combining deep-reactive ion etching (DRIE) and electrochemical etching (ECE) techniques is presented. These techniques have been used to fabricate membrane-based sensors and sensor arrays featuring different membrane sizes on a single wafer with a well defined etch stop. The described procedure is particularly useful in cases when the usage of SOI wafers is not an option. The combination of a grid-like mask pattern featuring uniform-size etch openings for the DRIE process with a reliable ECE technique allowed to fabricate silicon membranes with sizes ranging from 0.01 mm 2 to 2.2 mm 2 . The development of this new method has been motivated by the need to design a compact n-well-based calorimetric sensor array, where the use of a standard ECE technique would have significantly increased the overall size of the device
Publications 1 - 5 of 5