Finite element simulations of graphene based three-terminal nanojunction rectifiers
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Date
2013-07-21
Publication Type
Journal Article
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Abstract
Electrical rectification in graphene-based three-terminal nanojunctions is simulated using the finite element method. The model is based on diffusive charge carrier transport in a field-effect transistor configuration. The influence of device geometry, temperature, and electric potential disorder on the rectification efficiency is calculated. For a typical realistic device on a Si/SiO2 substrate, the model yields a room temperature efficiency of about 1% at a bias of 100 mV. The calculations are compared to previously published experimental results. © 2013 AIP Publishing LLC.
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published
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114 (3)
Pages / Article No.
33710
Publisher
American Institute of Physics
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03439 - Ensslin, Klaus / Ensslin, Klaus