Ab-initio Modeling of CBRAM Cells: from Ballistic Transport Properties to Electro-Thermal Effects
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2017
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Conference Paper
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Abstract
We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an atomic-scale filament connecting two metallic contacts have been constructed. Their transport properties have been studied in the ballistic limit and in the presence of electron-phonon scattering, showing good agreement with experimental data. It has been found that the relocation of few atoms is sufficient to change the resistance of the CBRAM by 6 orders of magnitude, that the electron trajectories strongly depend on the filament morphology, and that self-heating does not affect the device performance at currents below 1 μA.
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2017 IEEE International Electron Devices Meeting (IEDM)
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IEEE
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2017 IEEE International Electron Devices Meeting (IEDM)
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03925 - Luisier, Mathieu / Luisier, Mathieu
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159314 - Physics-based Modeling of Electronic Devices at the Nanometer Scale (SNF)