InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz
METADATA ONLY
Loading...
Author / Producer
Date
2019-11-03
Publication Type
Conference Paper
ETH Bibliography
yes
Citations
Altmetric
METADATA ONLY
Data
Rights / License
Permanent link
Publication status
published
Editor
Book title
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Journal / series
Volume
Pages / Article No.
8972718
Publisher
IEEE
Event
2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2019)
Edition / version
Methods
Software
Geographic location
Date collected
Date created
Subject
InP/GaAsSb; Double heterojunction bipolar transistors (DHBTs); Power-added efficiency; Maximal output power; Power gain; Load-pull measurements; W-band
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience