Scalability of FinFETs and Unstrained–Si/Strained–Si FDSOI–MOSFETs
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Date
2004
Publication Type
Conference Paper
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yes
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Abstract
Full—band Monte Carlo simulations are performed for n—type FinFETs as well as for unstrained—Si and strained—Si fully—depleted (FD) SOI-MOSFETs. Gate lengths of 50 nm down to 10 nm are considered, and a fixed off—current of 100 nA/μzm is in each case ensured by adjusting the silicon film thickness. The FinFET shows the best scaling trend, but the strained-Si FDSOI-MOSFET always involves the largest absolute value for the on—current. However, the on—current decreases upon scaling to 10 nm which might stem from a larger influence of surface roughness scattering in thin Si films affecting most strongly quasi—ballistic transport in strained Si. The feature of a decreasing current is found to be absent in drift—diffusion simulation because this approach does not include quasi—ballistic transport.
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Publication status
published
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Book title
Simulation of Semiconductor Processes and Devices 2004
Journal / series
Volume
Pages / Article No.
195 - 198
Publisher
Springer
Event
10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004)